A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using 80Co gamma rays, 1 MeV electrons and 1--9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (△Vth) generated by 60Co gamma rays are equal to that of 1 MeV electron and 1-7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (△Vth) generated by 60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of 60Co gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.

作 者： HE Sao-Ping YAO Zhi-Bin ZHANG Feng-Qi   作者單位： Northwest Institute of Nuclear Technology, Xi'an 710613, China  刊 名： 中國物理C（英文版）  ISTIC 英文刊名： CHINESE PHYSICS　C  年，卷(期)： 2009 33(6)  分類號： O4  關鍵詞： gamma rays   electrons   protons   radiation damage  

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